个人简介

代表性荣誉  2020 霍英东教育基金会青年教师基金  2019 科学探索奖  2019 北京智源青年科学家  2019 科学中国人（2018）年度人物特别奖–杰出青年科学家奖  2019 Wiley Young Researcher Award 2018/2019（中国唯一获奖者）  2019 北京市科学技术奖二等奖（第四完成人）  2018 《麻省理工科技评论》中国区35岁以下科技创新35人  2018 北京大学第十八届青年教师教学基本功比赛理工组二等奖  2017 求是杰出青年学者奖 研究简介 长期从事类脑计算研究工作，迄今共发表Nature Nanotechnology、Nature Electronics、Nature Communications等期刊和会议论文90余篇，Web of Science引用4400余次，H因子为30，2篇入选ESI热点论文，7篇入选ESI高被引论文，另撰写中英文专著5章，受邀做国际会议邀请报告26次，包含主旨（keynote）报告2次。主持国家杰青、重点研发计划、霍英东教育基金会青年教师基金、北京智源青年科学家等项目，获科学探索奖、求是杰出青年学者奖、Wiley青年研究者奖、《麻省理工科技评论》中国区35岁以下科技创新35人等奖项。Home Research Publications Team Courses News Contact Our research group is dedicated to innovating and developing artificial neuromorphic devices and arrays with ultra-high computing efficiency, ultra-low computing power consumption, high accuracy and large-scale integration. The main research direction is： 1）Through the microscopic characterization of the ion dynamics process to realize the exploration and recognition of the working mechanism of the device； 2）By simulating the working processes of synapses and neurons in the organism, new types of high-precision, low-power artificial neuromorphic device based on ion migration is designed and prepared; 3）Based on resistive memory and new-type neuromorphic devices, the large-scale integration of devices is realized by using the array structure to realize artificial neural networks and related logic applications. Microscopic characterization of ion kinetic processes An in-depth understanding of device microdynamics is crucial to the development of artificial neuromorphic devices and their arrays represented by memristors. This research group systematically and deeply conducted the processes of oxygen ion migration in transition metal oxide memristors, silver ion migration based on cation migration devices, and lithium ion migration in synaptic transistors based on two-dimensional layered semiconductor materials. Through the high-resolution transmission electron microscope (HR-TEM), scanning electron microscope (SEM), conductive scanning probe microscope (CAFM) and other characterization methods, the ion migration process in the memristor is intuitively and deeply displayed, and a variety of artificial The working mechanism of the demeanor device has played a guiding role in device design and array integration. Artificial neuromorphic device based on ion migration Traditional neuromorphic devices usually only attempt to simulate biological characteristics in electrical behavior. This research group designed the synaptic transistors and Hetero-synapse devices that can accurately simulate biological synapses from micro-dynamic processes to macro-electrical characteristics through detailed research on the working process of biological synapses. In addition to the conventional transition metal oxide material system, this research group has also studied synaptic transistors based on two-dimensional layered semiconductor materials, organic electrolytes, and artificial neural components based on metal-insulator conversion. An ultra-low power consumption of about 30 fJ / spike is achieved experimentally. Artificial neural network based on neuromorphic device array Based on the structure of two-terminal memristors and three-terminal heterologous synaptic devices, this research group is committed to achieving array integration with high integration density and ultra-low power consumption. Based on this array structure, efficient logic operations, machine learning problems, etc. can be achieved. This is of great significance for breaking through the "von Neumann" bottleneck, accelerating the realization of the "Internet of Things" and other concepts, and promoting the rapid development of neuromorphic computing. Book Chapters 1. Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Georgios Sirakoulis, Andrew Adamatzky and Leon O. Chua (eds.), Springer, 2018. 2. Y. Yang, T. Chang and W. Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, R. Tetzlaff (ed.), Springer, 2014. 3. Y. Yang, W. Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, T. Y. Tseng and S. M. Sze (eds.), American Scientific Publishers, 2012. 4. Y. Ynag，N. Wu，D. Ma，R. Huang，“Brain-inspired computing chip”，《Research on the Development Strategy of Chinese Artificial Intelligence 2.0》，Zhejiang University Press，2018。 Keynote and invited Talks 1. (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03 2017. 2. (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2018), Shenzhen, China, December 17-18, 2018. 3. (Invited) “Development Status and Prospects of Brain-inspired Intelligent Chips”, China IC Industry Promotion Conference (China chip conference), Chongqing, China, November 8-9, 2018. 4. (Invited) “Interfacial redox processes in memristive devices based on valence change and electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15 - 17, 2018. 5. (Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31- Nov 3, 2018. 6. (Invited) “Manipulation of ionic transport properties for synaptic elements with rich functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China, Aug. 31 - Sept. 2, 2018. 7. (Invited) “Research on New Neuromorphic Devices Based on Nanoion Grid Control ", Chinese Vacuum Society 2018 Annual Conference, Changchun, Jilin, China, August 16-19. 8. (Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018. 9. (Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05, 2018. 10. (Invited) “Emulation of the human brain by nanodevices at different scales”, CSTIC, Shanghai, China, Mar. 11-12, 2018. 11. (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017. 12. (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017. 13. (Invited) “Memristors for Emerging Memory and Computing Applications”, ASICON 2017, Guiyang, China, Oct. 25-28, 2017. 14. (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22 - 24, 2017. 15. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2017), Beijing, China, September 1 - 2, 2017 16. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20 - 25, 2017 17. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017 18. (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017 19. (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017 20. (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12 - 13, 2017. 21. (Invited) “Resistive switching dynamics and beyond”, ICSICT, Hangzhou, China, Oct 28 2016. 22. (Invited) “Memristive devices for brain inspired computing”, Workshop on Neuromorphic Devices and Computing Applications, Nanjing University, China, Jul 06 2016. 23. (Invited) “Probing switching mechanism and dynamics of memristive devices”, Workshop on Memristor Theory, Device and Applications, HUST, Wuhan, China, Dec 17 2015. 24. (Invited) “In situ TEM study on electrochemical dynamics in resistive random access memory”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 2015. 25. (Invited) “Metal–Insulator Transition in Functionalized Graphene for Select Element of Resistive Memory”, MRS Spring meeting, San Francisco, CA, Apr 2014. 26. (Invited) “RRAM filament structure and growth dynamics”, CSTIC 2014, Shanghai, China, Mar 2014. 27. (Invited) “Brain-inspired Neuromorphic Devices and Networks”, The 2018 Academic Work Annual Meeting of the Chemical and Materials Branch of the Youth Innovation Promotion Association of the Chinese Academy of Sciences and the Second International Youth Forum on Energy Chemistry and Materials, April 27, 2018, Ningbo. 28. (Invited) “Memristive neuromorphic device”, 2018 “Brain and Brain-Inspired Computing Frontiers”STARS Conference, Xishuangbanna, China, April 6 - 9, 2018. 29. (keynote) “Memristive Devices for Brain Inspired Computing”, The 2nd Youth Nano Forum 2017, October 30, 2017, Beijing. Course Semester Introduction Nanoionics Autumn Nanoionics is an emerging interdisciplinary subject, which has a wide range of applications in the fields of new types of information storage devices, logic devices, neuromorphic devices, brain-like computing chips, lithium batteries, fuel cells and other energy storage devices and sensors. Nanoionics focuses on the ionic transport properties of solid electrolytes at the microscale, covering physics, chemistry, electrochemistry, materials science, and microelectronics about the phenomenon of ion transport in solids and the resulting electrical, Optical and other properties. In the past two decades, the research on nano-ionology has shown a rapid growth, occupying an important position in the development of information science and technology, new energy, and brain-like computing. The main purpose of this course is to enable students to master the physical basics of nano-ionology and nano-ion devices related to the current new information, energy storage, and sensing technologies, to understand the latest research development trends in related fields, and to focus on the theoretical physics Images provide necessary professional theoretical knowledge and methods for students interested in related fields or engaged in related research. The main content of this course includes the development history of nano-ionology, the theory of ion transport in solids, defect chemistry, typical nano-ion materials and properties, fuel cells, lithium-ion batteries, non-volatile resistive memory, sensors, etc. Recommended Bibliography： Solid State Ionics for Batteries,T. Minami,Springer,2005； Solid State Ionics for Batteries,T. Kudo and K. Fueki,Wiley-VCH Verlag GmbH,1990； Electrochemistry,C. H. Hamann, A. Hamnett and W. Vielstich,Wiley-VCH Verlag GmbH,2007； Solid State Physics,N. W. Ashcroft and N. D. Mermin,Thomson Learning,1976； Transport in Nanostructures,D. K. Ferry and S. M. Goodnick,Cambridge University Press,1997； Nanoionics,L. M. Surhone, M. T. Tennoe and S. F. Henssonow,VDM Publishing,2011； Materials Science Foundation, Pan Jinsheng, Tong Jianmin, Tian Minbo, etc., Tsinghua University Press,2011； Memristors and Memristive Systems,R. Tetzlaff,Springer,2014； Advanced Material Characterization Technology and Experimen Spring Advanced material characterization technology is an important part of materials, devices, circuits, and engineering. It is the basis for understanding and regulating performance. It is also a bridge between the structure and composition of the micro world and the performance of macro materials, devices, and circuits. The content selection of this course covers the current advanced material characterization techniques, including chemical composition analysis methods, chemical valence analysis methods, spectroscopy analysis methods, nondestructive testing, electron microscopy, local and in-situ devices and circuits, and in situ Analysis methods, etc., focus on two aspects of subject teaching and hands-on practice, and strive to reflect the latest research development trends in related fields. At the same time, the arrangement of course content will take into account the actual needs of professional research and the needs of systemicity and integrity of the theory. It will focus on the physical images of related theories, and provide necessary information for students interested in related fields or engaged in related research. Professional theoretical knowledge and methods. A major feature of this course is that both course teaching and experimental teaching are emphasized. A large number of experimental lessons are supplemented to the basic knowledge of the classroom to enable students to personally contact the most advanced material characterization equipment, so as to grasp the theoretical knowledge and experiments skill. Recommended Bibliography： Handbook of microscopy for nanotechnology，Volume II Electron Microscopy,Yao Nan, Wang Zhonglin, Tsinghua University Press,2005； Handbook of Material Characterization and Detection Technology, Xu Zuyao, Huang Liben, Tong Guoqiang, Chemical Industry Press, 2009； Modern Research Methods of Materials Physics, Ma Ruyi, Xu Zuxiong, Metallurgical Industry Press, 1997； Transmission Electron Microscopy,David B. Williams and C. Barry Carter,Plenum Press,1996； High Resolution Electron Microscopy, Guo Xinxin, Ye Hengqiang, Science Press, 1985； Material Structure Characterization and Application, Wu Gang, Chemical Industry Press； Modern Analytical Technology, Lu Jiahe, Chen Changyan, Tsinghua University Press； Fundamentals of Materials Science, Pan Jinsheng, Tong Jianmin, Tian Minbo, etc., Tsinghua University Press, 2011； Introduction to Analytical Electron Microscopy, Rong Yonghua, Higher Education Press, 2006； Elements of X-ray Diffraction,B. D. Cullity,Addison-Wesley,1978；