个人简介

學歷 •美國史丹福大學應用物理系博士 (1977-1981) •美國史丹福大學應用物理系碩士 (1975-1977) •國立台灣大學物理系學士 (1971-1975) 現職與經歷 　　現職： •國立清華大學特聘講座教授 ( 2008/08- ) •國立清華大學物理系教授 (2003/06- ) 　　經歷： •國立清華大學 研發長 (2016/08-2017/03) •國立清華大學產學營運總中心主任 (2016/08–2017/03) •國際物理與物理聯盟副總裁暨C10委員會主席 (2015/01-2017/12) •國家實驗研究院董事 (2015-2017) •國立臺灣大學凝態科學研究中心主任 (借調, 2010/01-2012/07) •國立清華大學基礎科學研究中心主任 (2008/08-2009/12) •中華民國物理學會理事長(2008/01-2009/12) •國立清華大學物理系主任 (2005/08-2008/07 ) •國立清華大學自然科學講座教授 (2004/08-2008/07) •工業技術研究院(ITRI)資深顧問 (2003/06-2005/05 ) •美國貝爾實驗室Agere微電子部門特聘研究員 (2000/07–2003/05) •美國貝爾實驗室基礎物理部門研究員 (1981/06–2000/06) 榮譽與獎項 •台灣磁性技術協會(TAMT) 磁性技術獎章(2018) •2017年亞太材料學院院士 (5/2017-迄今) •第20屆國家講座主持人獎 (12/2016) •台灣第八屆傑出女性科學家獎 (3/2015) •Elected among Top 100 Women Worldwide with profiles in a book entitled as “Inspirational Profiles of Successful Women: Ceramic and Glass Scientists and Engineers”, publisher by John Wiley & Sons, Inc, (2015). •臺灣大學物理系2104年傑出系友 (12/2014–迄今) •美國物理學會會士(11/2009–now) •國立清華大學特聘講座教授 (8/2008–迄今) •國立臺灣大學講座教授 (1/2010–7/2012, 借調期間) •國立臺灣大學特聘教授 (1/2010–7/2012, 借調期間) •中華民國物理學會會士(1/2005–迄今) •國立清華大學自然科學講座(8/2004–7/2008) •傑出人才講座 (2/2004–2/2009) •國立清華大學台積電講座 (8/2003–1/2004) •2001 Distinguished Member of Technical Staff (DMTS) Award for seminal research achievements by Research, Agere Systems, formerly Bell Laboratories. The citation reads:“In recognition of her outstanding technical contributions and for her consistent performance,thought leadership,and positive impact to the business.” •746 th among the ISI's 1120 Most Cited Physicists (1981–1997) ranked by total citations in physics, astrophysics, materials science,chemical physics, and the related fields. •CEEE Outstanding Paper Award, Center of Electronics and Electrical Engineering, National Institute of Standards and Technology,1989. 研究興趣與成果 　　Updated on October 6, 2016 　　我的研究工作主要是以先進薄膜製成技術，開拓新穎材料，以探討其嶄新物理性質。 　　過去在美國貝爾實驗室從事基礎研究逾二十二年，早期(1981-86年)代表作是以發明金屬原子分子磊晶術而首次於磁性超結晶格中發現磁性之「調控效應」，進而首創「磁電子學」之觀念。在1987-1992年中，因為發明氧化物原子分子磊晶術，而成功製造單晶高溫超導薄膜以研究其超導異向性及其基本機制。 　　在1993後，致力於研究新穎高介電質材料薄膜為未來奈米電子與奈米光電之應用，其中最大貢獻是發現鎵釓氧化混合物首次製成了三五半導體之場電效應電晶體。此外，同時進行之尖端研究是「自旋電子學」，包括探討稀釋磁氧化物薄膜之磁性、自旋磁化分析、自旋注入，以及發展自旋場電效應電晶體等。 　　現今的研究拓展到新類量子物質拓樸絕緣體(TI)，主要基於其特殊物性及未來在低損耗電子元件和量子計算的應用。利用自旋泵和自旋力矩轉移鐵磁共振效應來研究磁性絕緣體與拓樸絕緣體,和磁性金屬與拓樸絕緣體的異質結構。使用高介電質閘極場效元件直接操控拓樸絕緣體的自旋-動量耦合特性，期望實現全電驅動自旋電子學。 　B. Review Articles: 1."Tunneling into the Al5 Compounds”, J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982). 2. "Synthesis of Rare Earth Films and Superlattices”, J. Kwo, in Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987). 3."Properties of In-situ Superconducting YBa2Cu3O7-x Films By Molecular Beam Epitaxy with an Activated Oxygen Source”, J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 101, (1989). 4."Tl-Based Superconducting Films By Sputtering Using a Single Target”, S. H. Liou, M. Hong, A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen, R. C. Farrow, and G. S. Grader, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 229, (1989). 5."Magnetic Rare Earth Superlattices”, C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991). 6."Growth and Properties of High Tc Films in YBa2Cu3O7-x Perovskite by Molecular Beam Epitaxy”, J. Kwo, in Journal of Crystal Growth, 111, 965, (1991). 7. "Charge Dynamics in Metallic CuO2 Layers”, B. Batlogg, H. Takagi, H. L. Kao, andJ. Kwo, in Electronic Properties of High Tc Superconductors, The Normal and Superconducting State, Ed. H. Kuzmany et al, Springer Series in Solid-State Sciences, 113, Springer-Verlog, Berlin, Heidelberg (1993). 8."Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999). 9."Materials Characterization of Alternative Gate Dielectrics”, B. W. Busch, O. Pluchery, Y. J. Chabal, D.A. Muller, R. L. Opila, J. Kwo, and E. Garfunkel, Materials Research Bulletin, March 2002, on "Alternative Gate Dielectrics for Microelectronics”, Ed. By G. Wilk, and R. Wallace. 10."High κ Gate Dielectrics for Si and Compound Semiconductors by MBE”, J. Kwo and M. Hong, Conf. Proc. MRS Fall Meeting, Dec. 2-6, 2002, Boston, MA. 11."High-quality thin single crystal γ-Al2O3 films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, "Tailoring Oxide-Semiconductor Interfaces – an enabling sub-nano approach for new science and next-generation high speed and high power devices” (氧化物-半導體界面控制–次奈米尺寸新興科學解決方案及次世代高速操作高功率元件), in Taiwan Nanotechnology (台灣奈米科技–從 2004 到嚮往的大未來), published by Nano-technology center of Industrial Technology Research Institute, Hsin Chu, Taiwan, 2004. 12."原子尺寸下氧化物與半導體界面的剪裁控制: 一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”,洪銘輝和郭瑞年,國立清華大學； "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, to appear in the Electronics Spectrum, the News Lettter of Electron Devices and Materials Association, Taiwain, Ed. Y. H. Wang, vol 10, no. 2, Dec. 2004. 13."Structure, Composition and Order at Interfaces of Crystalline Oxides and Other Highk Materials on Si ”, T. Gustafsson, R. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Fordan, D. G. Sholom, V. Vaithyanathan, M. Hong, and J. Kwo, in "Defects in Advanced High k Dielectric Nano-electronic Semiconductor Device”, Ed. E. P. Gusev, Springer, Netherlands, (2005). 14."High k Gate Dielectrics for Compound Semiconductors, by J. Kwo and M. Hong , chapter 10th in "Advanced Gate Stacks on High-Mobility Semiconductors”, edited by A. Dimoulas, E. P. Gusev, P. McIntyre, M. Heyns, Springer publishing company in the Springer Series Materials Science, (2006). 15."InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, a book chapter on "High Mobility Channel Semiconductor MOSFET”, Springer Publisher, (2009). 　C. 專利 (1981-2009): 1. J. Kwo, by G. E. Books (issued 1995) "Methods for Low temperature Growth of Epitaxial Silicon and Devices Produced Thereby”. 2.Cava, Kwo, and Thomas, by G. E. Books (issued 1996) "Methods for Growing transparent Conducting GaInO3 Films by Sputtering” 3.Carter, Cava, Kwo, Phillips, Thomas, by G. E. Books (issued on 5/13/1997) "Transparent Conductors Comprising Zinc-Indium-Oxide and Methods for Making Films”. 4.Hong 10-7-3-3-15-41, by J. A. Garceran (issued on 10/13/1998) "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of Making the Article”. 5.Cava, Hou, Kwo, Seelig, Watts, by G. E. Books (issued on 9/7/1999) "Methods for Making Thin Film Tantalum Oxide Layers with Enhanced Dielectric Properties and Capacitors Employing Such Layers”. 6.Hong-Kwo-Murphy, by E. E. Pacher (issued on 10/5/1999) "Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body, And Method of Making the Article”. 7.Hong-Kuo-Kwo-Mannaerts-Wang, by E. E. Packer (issued 1999) "Method of Making an Article Comprising an Oxide Layer on A GaAs-Based Semiconductor Body”. 8.Chen-Cho-Hobson-Hong-Kuo-Kwo-Murphy-Ren, by E. E. Pacher (issued 2000) "Method of Making An article Comprising an Oxide Layer on a GaAs-Based Semiconductor”. 9.Y. K. Chen, A. Y. Cho, W. S. Hobson, M. Hong, J. M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren, (issued 8/7/2001), "Method of Making An Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body”, U.S. Patent Number 6271069. 10.Hong-Kortan-Kwo-Mannaerts by W. Koba (issued 6/11/2001), "Si-Bases Field Effect Device with High Dielectric Constant Gate Dielectric”. M. Hong, A. R. Kortan, J. R. Kwo, and J. P. Mannaerts, "High dielectric constant gate oxides for Silicon-based devices”, U.S. Patent Number 6404027. 11.Hong 19-10-16-6 by E E Pacher (issued 10/22/2002), "Article Comprising An Oxide Layer On A GaAs or GaN-Based Semiconductor Body”, U.S. Patent Number 6469357. 12. M. Hong, J. M. Kuo, J. Kwo, J. P. Mannaerts, and Y. C. Wang (issued 12/17/2002), "Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, U.S. Patent Number 6495407. 13.Fleming-Kleiman-Kwo-Osenbach-Thomas by G. E. Books (issued 11/12/2002), "Improved Electro-Optic Device Including a Buffer Layer of Transparent Conducting Material”, U.S. Patent Number 6480633. 14. 洪銘輝、郭瑞年、陳治平、張翔筆、李威縉, "具有單晶氧化鈧接面膜的磊晶用基板之製作方法”, (中華民國 issued 7/2005), No 94123194/NP-19030. 15.洪銘輝、郭瑞年等, "三-五族金屬氧化物半導體元件製程改進”, 中華民國 and US, pending, 2005. 16.郭瑞年、洪銘輝、吳彥達、李威縉、張翔筆、李昆育、李毅君, "形成金氧半電晶體元件用之基板的製作方法及其製品”, (中華民國 issued 11/24/2006), No 94141352; US Pending. 17.M. Hong, J. Kwo, C. P. Chen, S. P. Chang, and W. C. Lee, "Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate”, (US patent issued 6/26/2007), No US7235467 B2.