个人简述:
吕业刚,男,1982年出生于湖南。主要从事相变存储器、硫系纳米线及微纳器件的相关研究,在Nano lett., APL等知名期刊上发表SCI学术论文30余篇,获得国家授权发明专利7件,2014年获得上海市优秀研究生成果奖(学位论文),2017年被评为“宁波大学最受欢迎的青年教师”。
研究方向:相变存储器、硫系纳米线制备及其微纳器件
拟招生专业及人数:通信与信息系统或电子与通信工程硕士研究生1名
主要经历及任职:
2013.05-至今,宁波大学信息科学与工程学院
2014.06-2014.12,德国卡尔斯鲁厄理工学院访问学者
2010.03-2013.01,中科院上海微系统与信息技术研究所,微电子学,工学博士学位;
2000.09-2007.07,湘潭大学,测控技术与物理电子学,工学学士与硕士学位;
科研工作:
[1] Lu Y., Stegmaier M., Nukala P., Giambra M. A., Ferrari S., Busacca A., Pernice W. H. P., and Agarwal R. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits. Nano. Lett., 2017, 17(1): 150-155.
[2] Lu Y., Wang M., Song S., Xia M., Jia Y., shen X., Wang G., Dai S., and Song Z. Multilevel data storage in multilayer phase change material. Appl. Phys. Lett., 2016, 109(17): 173103.
[3] Li Z., Lu Y., Ma Y., Song S., Shen X., Wang G., Dai S., and Song Z. Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition. J Non-Cryst Solids, 2016, 452: 9-13.
[4] Lu Y., Song S., Shen X., Song Z., Wang G., and Dai S. Study on phase change properties of binary GaSb doped Sb–Se film. Thin Solid Films, 2015, 589(0): 215-220.
[5] Wang M., Lu Y., Shen X., Wang G., Li J., Dai S., Song S., and Song Z. Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5. Crystengcomm, 2015, 17(26): 4871-4876.
[6] Lu Y., Song S., Shen X., Wu L., Song Z., Liu B., Dai S., and Nie Q. Investigation of Ga8Sb34Se58 Material for Low-Power Phase Change Memory. ECS Solid State Letters, 2013, 2(10): P94-P96.
[7] Lu Y., Song S., Shen X., Song Z., Wu L., Wang G., and Dai S. Low-power phase change memory with multilayer TiN/W nanostructure electrode. Appl. Phys. A-Mater. Sci. Process., 2014, 117(4): 1933-1940.
[8] Lu Y., Song S., Shen X., Wang G., Wu L., Song Z., Liu B., and Dai S. Phase change characteristics of Sb-rich Ga–Sb–Se materials. J. Alloys Compd., 2014, 586(0): 669-673.
[9] Ma Y., Lu Y., Li Z., Shen X., Wang G., Liu Y., and Dai S. Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory. ECS Journal of Solid State Science and Technology, 2015, 5(3): P160-P163.
[10] Lu Y., Zhang Z., Song S., Shen X., Wang G., Cheng L., Dai S., and Song Z. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. Appl. Phys. Lett., 2013, 102(24): 241907.
主持国家自然科学基金两项、省部级两项等。